マイクロバンプ方式アバランシェ光導電膜接合型固体撮像素子

概要

論文の詳細を見る
By connecting an avalanche multiplier film to a CMOS readout circuit via micro-bump electrodes, a newly sensitive solid-state imager has been developed. Optimization of the process conditions for indium bump electrode made it possible for micro-bump of 4 μm width and 5μm height to be formed into a 2/3-inch matrix array of 380k pixels. A prototype imager was constructed with a 0.5-μm-thick avalanche photoconductive film. Clear avalanche multiplication of about ten times was cbserved at an applied voltage of 75V. The imager has a good resolution and no recognizable after-images.
社団法人映像情報メディア学会の論文
1995-12-15