A CMOS Bandgap Reference Circuit for Sub-1-V Operation without Using Extra Low-Threshold-Voltage Device(Electronic Circuits)

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概要

• 論文の詳細を見る

• A new sub-1-V CMOS bandgap voltage reference without using low-threshold-voltage device is presented in this paper. The new proposed sub-1-V bandgap reference with startup circuit has been successfully verified in a standard 0.25-μm CMOS process, where the occupied silicon area is only 177μm×106μm. The experimental results have shown that, with the minimum supply voltage of 0.85 V, the output reference voltage is 238.2 mV at room temperature, and the temperature coefficient is 58.1 ppm/℃ from-10℃ to 120℃ without laser trimming. Under the supply voltage of 0.85 V, the average power supply rejection ratio (PSRR) is -33.2 dB at 10 kHz.

• 社団法人電子情報通信学会の論文
• 2005-11-01

著者

• Ker Ming‐dou

  National Chiao‐tung Univ. Hsinchu Twn

• CHEN Jung-Sheng

  Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung Univ

• KER Ming-Dou

  Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung Univ

• Ker Ming-dou

  Nanoelectronics And Gigascale Systems Laboratory Institute Of Electronics National Chiao-tung Univer

• Chu Ching-yun

  Silicon Integrated Systems Corp. Science-based Industrial Park

• Chen Jung-sheng

  Nanoelectronics And Gigascale Systems Laboratory Institute Of Electronics National Chiao-tung Univer

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