Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process

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概要

• 論文の詳細を見る

• The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched-capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.

• （社）電子情報通信学会の論文
• 2008-03-01

著者

• Ker Ming‐dou

  National Chiao‐tung Univ. Hsinchu Twn

• CHEN Jung-Sheng

  Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung Univ

• KER Ming-Dou

  Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung Univ

• Ker Ming-dou

  Nanoelectronics And Gigascale Systems Laboratory Institute Of Electronics National Chiao-tung Univer

• Chen Jung-sheng

  Nanoelectronics And Gigascale Systems Laboratory Institute Of Electronics National Chiao-tung Univer

• Ker Ming-dou

  Nanoelectronics And Gigascale Systems Laboratory Institute Of Electronics National Chiao-tung Univer

• Chen Jung-sheng

  Nanoelectronics And Gigascale Systems Laboratory Institute Of Electronics National Chiao-tung Univer

関連論文

• Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process
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