High-Current Characterization of Polysilicon Diode for Electrostatic Discharge Protection in Sub-Quarter-Micron Complementary Metal Oxide Semiconductor Technology

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概要

• 論文の詳細を見る

• Polysilicon diodes used in sub-quarter-micron complementary metal oxide semiconductor (CMOS) technologies are characterized by transmission line pulse (TLP) measurement to investigate device characteristics in a high-current regime. The second-breakdown current ($I_{\text{t2}}$) of the polysilicon diode shows good linear dependence on the device junction perimeter. When the polysilicon diodes are connected in a stacked configuration for reducing parasitic capacitance, the stacked polysilicon diodes show no degradation in electrostatic discharge (ESD) robustness compared with a single polysilicon diode. Such CMOS process-compatible polysilicon diodes have been successfully used as on-chip ESD protection devices for GHz radio-frequency (RF) circuits.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-06-15

著者

• Ker Ming-dou

  Nanoelectronics And Gigascale Systems Laboratory Institute Of Electronics National Chiao-tung Univer

• Chang Chyh-yih

  Esd Protection Technology Department Soc Technology Center Industrial Technology Research Institute

• Ker Ming-Dou

  Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan

• Chang Chyh-Yih

  ESD Protection Technology Department, SoC Technology Center, Industrial Technology Research Institute (ITRI), Bldg. 14, 195, Sec. 4, Chung-Hsing Rd., Chutung, Hsinchu, Taiwan

関連論文

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• Impedance-Isolation Technique for ESD Protection Design in RF Integrated Circuits
• Novel Implantation Method to Improve Machine-Model Electrostatic Discharge Robustness of Stacked N-Channel Metal-Oxide Semiconductors (NMOS) in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductors (CMOS) Technology : Semiconductors
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• A CMOS Bandgap Reference Circuit for Sub-1-V Operation without Using Extra Low-Threshold-Voltage Device(Electronic Circuits)
• Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection
• High-Current Characterization of Polysilicon Diode for Electrostatic Discharge Protection in Sub-Quarter-Micron Complementary Metal Oxide Semiconductor Technology
• Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process

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