Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process

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概要

• 論文の詳細を見る

• A novel electrostatic discharge (ESD) protection device with a threshold voltage of ${\sim}0$ V for complementary metal-oxide semiconductor (CMOS) integrated circuits in sub-quarter-micron CMOS technology is proposed. Quite different to the traditional ESD protection devices, such an active ESD device is originally standing in its turn-on state when the IC is zapped under ESD events. Therefore, such an active ESD device has the fastest turn-on speed and the lowest turn-on voltage to effectively protect the internal circuits with a much thinner gate oxide in future sub-0.1 μm CMOS technology. The proposed active ESD device is fully process-compatible to the general sub-quarter-micron CMOS process.

• Japan Society of Applied Physicsの論文
• 2004-01-15

著者

• Ker Ming-dou

  Nanoelectronics And Gigascale Systems Laboratory Institute Of Electronics National Chiao-tung Univer

• Tseng Tang-Kui

  Product and ESD Engineering Department, SoC Technology Center, Industrial Technology Research Institute (ITRI), Bldg. 14, 195, Sec. 4, Chung-Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.

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• Active Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process

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