Switched Diffusion Analog Memory for Neural Networks with Hebbian Learning Function and Its Linear Operation (Special Section of Papers Selected from JTC-CSCC'95)
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概要
- 論文の詳細を見る
We have fabricated a new analog memory for integrated artificial neural networks. Several attempts have been made to develop a linear characteristics of floating-gate analog memorys with feedback circuits. The learning chip has to have a large number of learning control circuit. In this paper, we propose a new analog memory SDAM with three cascaded TFTs. The new analog memory has a simple design, a small area occupancy, a fast switching speed and an accurate linearity. To improve accurate linearity, we propose a new charge transfer process. The device has a tunnel junction (poly-Si/poly-Si oxide/poly-Si sandwich structure), a thin-film transistor, two capacitors, and a floating-gate MOSFET. The diffusion of the charges injected through the tunnel junction are controlled by a source follower operation of a thin film transistor(TFT). The proposed operation is possible that the amounts of transferred charges are constant independent of the charges in storage capacitor.
- 社団法人電子情報通信学会の論文
- 1996-06-25
著者
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NAKAJIMA Koji
Laboratory for Brainware Systems, Laboratory for Nanoelectronics and Spintronics, Research Institute
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Hayakawa Yoshihiro
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Hayakawa Yoshihiro
Laboratory For Brainware Reseach Institute Of Electrical Comunication Tohoku University:laboratory F
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Sawada Y
Research Center For Electrical Communication Tohoku University
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Sawada Yasuji
Laboratory For Microelectronics Research Institute Of Electrical Communication Tohoku University
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Nakajima K
Faculty Of Science And Technology Hirosaki University
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Won Hyosig
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Nakajima Koji
Laboratory For Brainware Reseach Institute Of Electrical Comunication Tohoku University:laboratory F
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