Single Electron Random Number Generator(Electronic Circuits)

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概要

• 論文の詳細を見る

• A random number generator composed of single electron devices is presented. Due to stochastic behavior of electron tunneling process, single electron devices have intrinsic randomness. Using its randomness, a true random number generator can be implemented. Although fluctuation of device parameters degrades the performance of the proposed circuit, we show that the adjustment of the bias voltages can compensate the fluctuation.

• 社団法人電子情報通信学会の論文
• 2004-05-01

著者

• NAKAJIMA Koji

  Laboratory for Brainware Systems, Laboratory for Nanoelectronics and Spintronics, Research Institute

• Sato S

  Laboratory For Electronic Intelligent Systems Research Institute Of Electronical Communication Tohok

• SATO Shigeo

  Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohok

• Nakajima K

  Faculty Of Science And Technology Hirosaki University

• AKIMA Hisanao

  Laboratory for Electronic Intelligent Systems, Research Institute of Electronical Communication, Toh

• Akima Hisanao

  Laboratory For Electronic Intelligent Systems Research Institute Of Electronical Communication Tohok

• Nakajima Koji

  Laboratory For Brainware Reseach Institute Of Electrical Comunication Tohoku University:laboratory F

• Sato Shigeo

  Laboratory For Brainware Systems/nanoelectronics And Spintronics Research Institute Of Electrical Co

• Sato Shigeo

  Laboratory For Brainware Systems Laboratory For Nanoelectronics And Spintronics Research Institute O

• Sato Shigeo

  Laboratory for Brainware System, Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 Japan

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