Heart Rate Simulation with IPFM Model Considering Absolute Refractory Period and Demodulation of Original Generating Function
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概要
- 論文の詳細を見る
The Heart Rate Variability(HRV) analysis has become vigorous these days. One reason for this is that the HRV analysis investigates the dynamics of the autonomic nervous system activities which control the HRV. The Integral Pulse Frequency Modulation(IPFM) model is a pulse generating mechanism model in the nervous system, that is one of the models which connects the HRV to the autonomic nervous system activities. The IPFM model is a single frequency component model; however, the real HRV has multiple frequency components. Moreover, there are refractory periods after generating action potentials are initiated. Nevertheless, the IPFM model does not consider refractory periods. In order to make sure of the accuracy and the effectiveness of the integral function(IF) method applied to the real data, we consider the absolute refractory periods and two frequency components. In this investigation, the simulated HRV was made with a single and double frequency component using the IPFM model with and without absolute refractory periods. The original generating function of the IPFM model was demodulated by using the instantaneous heart rate tachogram. The power of the instantaneous pulse rate per minute was analyzed by the direct FFT method, the IF FFT method without the absolute refractory periods, and the IF FFT method with the absolute refractory periods. It was concluded that the IF FFT method can demodulate the original generating function accurately.
- 社団法人電子情報通信学会の論文
- 1998-08-25
著者
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野口 祐二
Univ. Tokyo Tokyo Jpn
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Noguchi Yutaka
Department Of Machine Intelligence And System Engineering Intelligent System Design Laboratory Tohok
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MATSUMOTO Fujihiko
Department of Applied Physics, National Defense Academy
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NOGUCHI Yasuaki
Department of Applied Physics, National Defense Academy
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HAMADA Takeo
Department of Applied Physics, The National Defense Academy
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SUGIMOTO Suguru
Faculty of Engineering, Shonan Institute of Technology
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Hamada T
Meijo Univ. Nagoya‐shi Jpn
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Noguchi Yasuaki
Department Of Applied Electronics Tokyo Institute Of Technology
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Sugimoto S
Ritsumeikan Univ. Kusatsu‐shi Jpn
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Sugimoto Suguru
Faculty Of Engineering Sagami Institute Of Technology
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Matsumoto F
The Department Of Applied Physics National Defense Academy
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Matsumoto Fujihiko
Department Of Applied Physics National Defense Academy
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SUGIMOTO Suguru
Faculty of Electrical Engineering, Shohnan Inst.of Tech.
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