スピン注入磁化反転の研究動向

概要

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Tremendous progress has recently been made in research on spin transfer switching, which can reverse magnetization by injecting spin-polarized currents into nano-scale magnets. In conventional switching with a current field, the switching field increases with decreasing magnet size (field〓 1/size). In spin transfer switching, on the other hand, the required current decreases as magnet size decreases. Spin transfer switching is thus expected to be applied to large capacity Magnetic RAM as a novel writing technique with low power consumption. In this article, we explain recent research trends and present an outlook on spin transfer switching from the viewpoints of principle and experiments, particularly for the purpose of MRAM application. The main topics are spin transfer switching in GMR and TMR films, as well as thermal durability and switching speed, which are important factors in applications. The influence of magnetic field and heat on spin transfer switching is also mentioned.
社団法人日本磁気学会の論文
2004-09-01