飽和磁化低減によるスピン注入磁化反転の反転電流密度の低減

概要

論文の詳細を見る
Spin-momentum transfer switching is a promising candidate for magnetization switching with quite low consumption of electricity. However, its critical current (I_c) and current density (J_c) are still too large for it to be applied to TMR films and MRAM without breaking them electrically. Decreasing the saturation magnetization (M_s) of memory cells is effective in decreasing both I_c and J_c, because they are proportional to M_s^2. Here we suggest the use of magnetic film with M_s of 〜600 emu/cm^3 as a memory cell, resulting in the reduction of I_c by one digit. The estimated thermal durability and switching time were acceptable. The characteristic values of TMR films, which are necessary in order to apply spin-momentum transfer switching to MRAM, are now gaining practicality.
社団法人日本磁気学会の論文
2004-02-01