MnデルタドープGaAsとそのヘテロ構造 : 強磁性転移温度と磁性制御

概要

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We grew III-V-semiconductor-based ferromagnetic heterostructures consisting of Mn delta(δ)-doped GaAs and p-type AlGaAs, where the overlap of the hole wavefunction with the Mn δ-doping profile leads to high ferromagnetic transition temperatures of over 100 K. The Curie temperature Tc of the heterostructure prepared in suitable conditions was 172 K, the highest Tc value reported for III-V (InAs, GaAs) magnetic semiconductors. Furthermore, we demonstrated electrical and optical control of ferromagnetism in the semiconductor heterostructures at high temperatures of 100-117 K. We were able to isothermally change the paramagnetic state to the ferromagnetic state and vice versa by applying a gate electric-field or by light irradiation. The large modulation of Tc (ΔTc〜15 K) at high temperatures (>〜100 K) demonstrated here may pave the way for functional device applications compatible with present semiconductor technology.
社団法人日本磁気学会の論文
2004-02-01