格子不整合系半導体層のヘテロエピタキシー(<特集2>原子レベルでの結晶成長)

概要

論文の詳細を見る
Semiconducting layers grown on a lattice-mismatched substrate have received much attention not only for in-creasing material selection for new electronic devices but also for disclosing heteroepitaxy mechanism. However, growth phenomena and mechanisms have not been investigated satisfactorily at atomic scaled layer. They are important to obtain a high quality of semiconducting layer. In our laboratory, In_xGa_<1-x>As(x=0〜l) layers on various substrates such as GaAs, InAs, and InP have been grown by MBE to investigate growth phenomena and mechanisms in lattice-mismatched systems. In this paper, firstly, experimental results of InGaAs crystalline quality are described with respect to the degree in the lattice mismatching. We point out that the crystalline quality is recovered on approaching from alloy composition to compound composition even increasing the degree in lattice mismatching in a some high degree region. Next, the growth mechanism is described based on the observation of RHEED patterns and TEM images. Finally, the critical thickness is calculated with an atomic scaled level, and it agrees well with the experimental results.
日本結晶成長学会の論文
1992-03-15