エピタキシー機構総論(<特集>ヘテロエピタキシー機構)

概要

論文の詳細を見る
Epitaxial growth and mechanism are reviewed. The epitaxial growth could be classified into four categories based on crystalline structure and lattice constant: homoepitaxy, quasi-homoepitaxy, quasi-heteroepitaxy, and heteroepitaxy. Particularly, the epitaxial growth methods for HI-V semiconductors are briefly described concerning with their advantage and disadvantage in growth. Further, unique technologies for the epitaxial growth are summarized. The initial growth modes of the epitaxy are introduced. The criterions for the modes are given in terms of the saturation degree, bonding energy, and adsorption energy. The calculation of strain energy in an intial hetero-epitaxial grown layer using valence-force-field method is introduced as an example of a microscopic analysis. The critical thickness calculated by the microscopic analysis is thinner than that by a continuum macroscopic analysis. The results agree well with the experimental thicknesses. It would give the approach to reveal the heteroepitaxial growth mechanism with an atomic scale.
日本結晶成長学会の論文
1993-12-25