307 シリコン基板上の銅薄膜における熱応力と変形

概要

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Recently, copper is replacing aluminum as the interconnect material in the Si-ULSI devices. Copper has lower electric resistance and higher resistance to EM than aluminum. On the other hand, application of a lower specific inductive capacity, Low-k, material to the intermediate insulation film between copper and silicon is also a crucial subject. From this viewpoint, the authors have been attempting to assess the stress change accompanied by heating and cooling on copper films deposited on a silicon substrate with three insulation layers having different capacity, and to clarify the influence of the insulation film material on the thermal stress. In the previous research, it was found that tensile stress was raised after a heat cycle. In present study, by means of X-ray diffraction, stress data previously measured from deflection amount has been confirmed, and then the effect of the heat cycle as well as the difference in the insulation film material on the grain size of the copper film has been investigation.
一般社団法人日本機械学会の論文
2003-09-19