ケイ素添加したAl_3C_2B_<48>型結晶の合成とその性質

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Al_3C_2B_<48> crystals and Si doped Al_3C_2B_<48> type crystals were prepared by the reaction between carbon, boron, aluminium and silicon powders as starting materials in an argon atmosphere. The experimental conditions for obtaining these crystals of relatively large size were determined. As-grown Al_3C_2B_<48> crystals and Si doped Al_3C_2B_<48> type crystals were subjected to chemical analysis and the study of oxidation in air at high temperatures, and also the measurements of crystal size, unit cell dimension, Vickers microhardness and electrical resistivity, respectively. The results obtained are as follows : (1)The suitable conditions for growing Al_3C_2B_<48> and Si doped Al_3C_2B_<48> type crystals were the atomic ratios of starting materials(C/B=0.056, B/Al=0.10, Si/B=0〜0.07), the soaking temperature(1450℃)and the soaking time(10 hrs). (2)Al_3C_2B_<48> crystals made under the above conditions, were yellowish brown and semitrans-parent, having a nearly spherical polyhedral shape. The largest crystals prepared had the dimensions of about 1.8mm×1.8mm×1.8mm〜2.5mm×2.5mm×2.5mm. (3)The unit cell dimensions, Vickers microhardness(Hv)and electrical resistivity(ρ)of the crystals were a=12.302(1)?, b=12.621(1)?, c=10.161(1)?, V=1577.7(2)?^3, Hv=27GPa, ρ=2.58×10^<-2>Ω・cm for Al_3C_2B_<48> crystals(Si/B=0), and a=12.291(2)?, b=12.620(4)?, c=10.161(1)?, V=1576.3(1)?^3, Hv=36GPa, ρ=90.52×10^<-2>Ω・cm for Si doped Al_3C_2B_<48> type crystals(Si/B=0.004), respectively. (4)The oxidation reaction of Al_3C_2B_<48> crystals and Si doped Al_3C_2B_<48> type crystals began to proceed at about 710℃ in air, and their oxidation products were found to be 9Al_2O_3・2B_2O_3(orthorhombic system)and B_2O_3(hexagonal system)phases.
社団法人日本材料学会の論文
1994-02-15

ケイ素添加したAl_3C_2B_<48>型結晶の合成とその性質

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