スパッター法によるZnO-SiO_2およびTiO_2-SiO_2系のアモルファス化領域(<特集>セラミック材料)

概要

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Amorphous films in the ZnO-SiO_2 and TiO_2-SiO_2 systems were prepared by sputtering method and the amorphous region was determined. The compositional difference in the film from that of the target used to prepare it indicated that the order of sputtering rate is TiO_2<SiO_2<ZnO. The amorphous region of ZnO-SiO_2 system was narrower than that of MgO-SiO_2 and CaO-SiO_2 systems. Physical properties of these systems were compared. Two possible reasons were suggested for the difference of the amorphous region. One is the difference of glass structure and the other is the defect of oxygen in the amorphous films. The amorphous region of the TiO_2-SiO_2 system was narrower than that of the ZnO-SiO_2 system and this was attributed to the strong tendency for phase separation.
社団法人日本材料学会の論文
2000-06-15