高周波スパッター法によるSiO_2-CaO系薄膜のアモルファス化領域と熱的安定性

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Amorphous regions and thermal stability of sputtered films in the Si0_2 CaO system were determined. The results are summarized as follows. (1) The amorphous region in the Si0_2 CaO system by the sputtering method (100 W, 25h) was found in the composition range CaO = 0 89 mol%, which is slightly larger than that of the Si0_2 MgO system. (2) Crystallization tem perature Tc was determined from the DTA measurements of the sputtered amorphous films and melt quenched glasses. (3) Thermal stability of the amorphous films and glasses was evaluated from the T_c/T_L ratio. T_c/T_L rs highest 0.8 at CaO = O mol% It passes maxima and minima as CaO content is increased and reaches the lowest value 0.44 at CaO = 71.5 mol% Melt quenched glasses showed similar compositional dependence of T_c/T_L ratio to that of sputtered films. (4) According to the empirical relationship between T_c/T_L and critical cooling rate for glass formation Q^*, the T_c/T_L ratio of 0.44 corresponds to Q^*= 10^<8.5> ℃/s which is well within the estimated quenching rate by the sputtering method.
社団法人日本セラミックス協会の論文
1995-01-01