等温過渡容量法による(Ba, Sr)TiO_3系半導体セラミックス界面準位の評価

概要

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Interface states at the grain boundaries in La, Mn-codoped Ba_<0.5>Sr_<0.5>TiO_3 ceramics have been characterized by using the isothermal transient capacitance method. The ceramic materials doped with 0.05, 0.06 and 0.075 mol% Mn were used for the present experiments, all of which had the Curie point around -70℃ and a room temperature resistivity >10^7 Ω・m with a positive temperature coefficient of resistivity effect of more than seven orders of magnitude. The results indicate the existence of grain boundary interface states at a level of about 1.0 eV below the conduction band edge in all the materials. On the other hand, it has been found from an analysis of the resistivity-temperature characteristics in the materials that barrier layers with a potential height of about 0.85 eV were built at the grain boundaries above the temperature giving the maximum resistivity in the respective materials.
社団法人日本セラミックス協会の論文
1995-10-01