Si_3N_4/W 接合界面での反応の速度論

概要

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In relation to the joining of silicon nitride ceramics to metal, the kinetics of reaction between Si_3N_4 and Whas been investigated in Ar and N_2 at temperatures from 1473 to 1673 K. Using an Si_3N_4-W powder mixture, the reaction rate was determined with a ther-mobalance, and the reaction products were examined by X-ray diffraction. The reaction between Si_3N_4 and Wstarted at 1473 K in Ar, but not in N_2. Tungsten nitride was not detected regardless of the atmosphere. Tungsten silicide W_5Si_3 was produced only in Ar, and it changed to WSi_2 at higher temperature and on prolonged heating. The initial rate obeyed the linear rate law and the activation energy was 278 kJ・mol^<-1>. The rate-determining step is′considered to be the chemical reaction at the interface between Si_3N_4 and W. At a late stage of reaction, the kinetics followed the parabolic rate law and the activation energy was 281 kJ・mol^<-1>. The reaction rate is probably controlled by the solid-state diffusion through the product layer.
社団法人日本セラミックス協会の論文
1995-02-01