ゾル・ゲル法による半導性酸化スズ系ガラス複合物の調製

概要

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The preparation of the semiconductive glass composite with SnO_2 fine particles dispersed in glass matrix was undertaken by the sol gel process. The relationship be tween the electrical conductivity and the microstructure of this composite was discussed by comparing with the glass composite composed of coarse grained semiconductive SnO_2 particles and glass frit. (1) In sol gel derived composite, increases in crystallite and particle sizes of SnO_2 in glass matrix were suppressed even at high firing temperature due to the higher glass forming temperature of the glass component gel than that of the glass frit, resulting in the microstructure with dispersed finer SnO_2 particles. (2) The electrical conductivity and the temperature coefficient of electri cal resistance of the sol gel processed composite in creased significantly with firing temperature, which has been attributed to remarkable increase in the elec trical conductivity of the Sn0_2 particle dispersed in the glass matrix with firing temperature due to the progresses in the crystanization of the SnO_2 gel parti cle and the Sb doping reaction into SnO_2.
社団法人日本セラミックス協会の論文
1994-03-01