酸化スズ系厚膜抵抗体の電気伝導組織形成に及ぼすマトリックスガラス及びアルミナ基板の影響

概要

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Present investigation was undertaken to get useful technological informations for the suitable designing of the semiconductive glass composite having desired electrical properties. The composite has a microstructure in which semiconductive SnO_2 fine particles are dispersed in a glass matrix. The effects of the interaction between the glass and Al_2O_3 substrate and the sinterability of the glass particles were revealed. When the magnitude of the interaction between the glass and Al_2O_3 substrate was relatively large, many microcracks occurred in the composite and the electrical conduction path was broken because of the tensile stress parallel to the Al_2O_3 substrate in the thick film samples. It was supposed that these cracks were generated by the difference of the shrinkage between the matrix glass and Al_2O_3 substrate. On the other hand, when the sinterability of the glass particles was relatively large, the influence of the Al_2O_3 substrate on the electrical conduction path was scarcely large because the homogeneous microstructure and good mutual connection were developed during firing. Therefore, it is feasible to produce the thick film resistor having well-controlled electrical properties by the suitable selecton of the glass composition and of the firing condition.
1992-05-01