プラズマ焼結によるAIN級密化の時間変化

概要

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Pure and 3 wt%-Y_2O_3 doped AlN powder compacts were sintered in an r. f. inductively coupled plasma under reduced pressure. The effects of the r. f. output power and gas pressure on their densification were investigated. AlN powder compacts doped with 3 wt%-Y_2O_3 showed rapid densification to the theoretical density, while pure AlN densified only to 68% of the theoretical density under the experimental conditions studied.Time dependence of the densification of 3 wt%-Y_2O_3 doped AlN was found to be divided into three stages; (1) rapid densification region occurring during insertion to plasma, (2) plateau region of constant density, (3) re-densification region with evaporation of AlN. Direct measurements of the specimen temperature showed that the densification at the first stage proceeded during rapid heating up to 1800℃, and that the re-densification at the third stage occurred as a result of elevation of the specimen temperature from 1800℃ to>2000℃.
社団法人日本セラミックス協会の論文
1992-02-01