低温プラズマを用いたSiCの焼結

概要

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SiC powder compacts were sintered in inductively coupled plasma (ICP) at 4 MHz. Boron and carbon were added to SiC powder as sintering aids in the present experiments. The plasma used here was low temperature A r plasma working at low gaseous pressure = 0.2-6.5 kPa, since it was easy for samples to be inserted into plasma. Parameters influencing the densification were gaseous pressure, gas flow rate, sintering duration and r.f. out-put power. SiC was found to be extensively densified under the experimental conditions gaseous pressure = 1.0 kPa, gas flow rate = 70-270 SCCM, r.f. power = 12 kW, duration = 2 min. The weight loss during sintering was a problem to be solved in the present low temperature plasma. Morphological studies showed that abnormal grain growth could not be observed. A crystallographic change was observed from 15 R and 3 C to 6 H after plasma sintering.
社団法人日本セラミックス協会の論文
1990-02-01