Y_2O_3添加AINにおけるプラズマ焼結温度に関する研究

概要

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The temperature measurement of Y_2O_3 doped AlN during plasma sintering was studied. The temperature of specimen, T_s was measured using a (W-5%Re)-(W-26%Re) thermocouple buried in the specimen. T_s below 1100℃ could be measured directly in-situ using a low pass filter. T_s above 1100℃ could not be measured due to interference of plasma noise. Hence, T_s was measured by extrapolation of a cooling curve after extinguishment of plasma. The extrapolation curve was determined by simulating the cooling curve. The thermal conductivity and emissivity of the specimen could be also estimated from simulation of the cooling curves. The measurement of T_s and simulation of the cooling curve showed that T_s was elevated from 1800℃ to 2200℃ by the change of surface morphology after AlN evaporation, but emissivity was kept constant in spite of the change in morphology. It was found that rapid re-heating and re-densification after AlN evaporation occurred by the increase in heating from plasma, which was enhanced by Y_2O_3 powder deposited on the specimen surface.
社団法人日本セラミックス協会の論文
1992-05-01