ゾル-ゲル法によるプロトン伝導性アモルファスリン酸系薄膜の合成

概要

論文の詳細を見る
Electrical properties of the sol-gel derived amorphous films containing P_2O_5 have been investigated. In the binary system of P_2O_5-SiO_2, the surface resistivities at 25℃ under a relative humidity ranging from 50 to 90%RH were 2-3 orders of magnitude higher than that of the P_2O_5-TiO_2 films. In a nominal composition of P_2O_5・9SiO_2 (molar ratio), the conductivity at 25℃ of the film prepared by using H_3PO_4 for the starting materials of P was 10^<-6> S・cm^<-1>. This was 1 or 2 orders of magnitude higher than that of the films prepared by using partially hydrolyzed P_2O_5: PO[OCH(CH_3)_2]_<3-x>(OH)_x or PO(OCH_3)_3 as starting materials of P, respectively. In the former case of PO[OCH(CH_3)_2]_<3-x>(OH)_x, however, the conductivity of the film obtained from a coating solution kept for 40d after preparation increased up to 10^<-6> S・cm^<-1>. In these films, we observed absorption band at 1300 cm^<-1>, which was assigned to P=O stretching vibration. The high proton-conductivities come from the increase of hydrogen-bonded protons in the glass structure with increasing the P=O bonding content.
社団法人日本セラミックス協会の論文
1998-04-01