An Examination of the Angular Correlation of Annihilation Radiation in Silicon Single Crystal
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概要
- 論文の詳細を見る
The angular correlation of annihilation radiation along the [110]-axis in silicon has been measured at 120∼130K with a special care in orienting the crystal. As predicted by a recent many-body theory of the annihilation of free positrons in a simplest nearly-free-electron system (K. Fujiwara, T. Hyodo and J. Ohyama: J. Phys. Soc. Japan 33 (1972) 1047), the cut-off of the narrow component at the angle corresponding to the filled zone face has been found to be sharper than that given by the independent-particle computation of Stroud and Ehrenreich.
- 社団法人日本物理学会の論文
- 1973-10-05
著者
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HYODO Toshio
Institute of Physics,College of Arts and Sciences,University of Tokyo
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Hyodo Toshio
Institute Of Physics College Of Arts And Sciences University Of Tokyo
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Hyodo Toshio
Institute Of Physics College Of General Education The University Of Tokyo
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Fujiwara Kunio
Institute Of Physics College Of General Education University Of Tokyo
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Fujiwara Kunio
Institute For Solid State Physics University Of Tokyo
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Fujiwara Kunio
Institute of Physics, College of General Education, The University of Tokyo
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