Ultrasonic Attenuation in n-Type Ge.III.Effects of Magnetic Field
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概要
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The magnetic field dependence of ultrasonic attenuation at(B) has been measuredfor Sb-doped Ge over the impurity concentration region 3.1 x 10" to 3.3 x 10"cm '. It is found that the results are sensitive to the impurity concentration (V),in particular the difference in the attenuation coefficient with and without mag-netic field, Aa(B)= ct(B) - a(0), has a peak around 1.5 x 10" cm ' as a functionof the concentration. It is pointed out that the attenuation coefficient per electronin the D band should increase with the magnetic field. For ./V>2X 10" cm '4a(B) exhibits the behavior expected from a simple free electron gas model.
- 社団法人日本物理学会の論文
- 1984-04-15
著者
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MIYASATO Tatsuro
The Institute of Scientific and Industrial Research, Osaka University
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Sakurai Hiromi
Department Of Analytical And Bioinorganic Chemistry Kyoto Pharmaceutical University
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Suzuki Katsuo
The Institute Of Scientific And Industrial Research Osaka University
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Miyasato Tatsuro
The Institute Of Scientific And Industrial Research Osaka University
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