Heat-Pulse Scattering in P-Doped Ge under Magnetic Field

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概要

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• The magnetic field dependence of the scattering of ballistic heat-pulse phononspropagating along the [1103 axis in Ge doped with 5 x 10" P/cm' was measuredat 1.8 and 4.2 K under the [1004 magnetic field up to 5.5 T. The phonon scatteringfor FT and L modes showed a magnetic field effect. For FT mode, the relativesignal height of the transmitted heat-pulse power showed a saturation freted atfields heigher than 4-5 T, which is similar to that of Sb-doped Ge, but not similarto As-doped Ge. This is in contrast to the results of thermal-conductivity wherethe behavior of P-doped Ge is more resemble to that of As-doped Ge. The experi-mental results were compared with the theoretical calculation which is based onthe phonon scattering by the isolated donor and/or donor-pairs. It seems that bothcalcttlations can not fully explain the experimental results.

• 社団法人日本物理学会の論文
• 1985-03-15

著者

• Tokumura Masao

  The Institute Of Scientific And Industrial Research Osaka University

• Tokumura M

  The Institute Of Scientific And Industrial Research Osaka University

• Miyasato Tatsuro

  The Institute Of Scientific And Industrial Research Osaka University

関連論文

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• Fabrication of Si:H Alloy with Plenty of -SiH_3 by Reactive Sputtering onto Low Temperature Substrate
• Effect of Electrical Conductivity of Substrate on RF-Sputter-Deposition of μc-Si:H at -180℃
• Ultrasonic Attenuation in n-Type Ge.III.Effects of Magnetic Field
• Anomalous Behavior of Acoustic Attenuation in Ge:Sb under [001] Magnetic Field
• Heat-Pulse Scattering in P-Doped Ge under Magnetic Field
• Ballistic Heat-Pulse Transport in Sb-Doped Ge under Magnetic Field

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