Ultrasonic Attenuation in n-Type Ge.II. Effects of Uniaxial Stress
スポンサーリンク
概要
- 論文の詳細を見る
The stress dependence of the ultrasonic attenuation x(X) in Sb doped Ge wasmeasured at low temperatures over the wide concentration region 3.3 x 10" to1.6 x 10" cm-'. In the intermediate concentratiorn region the behavior of ox(X) atlow stresses is different from tluat observed in the low concentration region exceptthe sample with 3.1 x 10" Sb cm-'. A simple model is proposed which explainsqualitatively the experiment in the lower part of the intermediate region. In thehigh concentration region a free electron gas m.odel can explain the behaviorof x(X) provided that the existence of a single relaxation time r is assumed inthis system. The values of r estimated based on this model are consistent withthose in the stress free case.
- 社団法人日本物理学会の論文
- 1983-12-15
著者
-
Sakurai Hiromi
Department Of Analytical And Bioinorganic Chemistry Kyoto Pharmaceutical University
-
Suzuki Katsuo
Department Of Electric Electronics And Computer Engineering Waseda University
関連論文
- First-Principles Study on Piezoelectric Constants in Strained BN, AlN, and GaN
- Infrared Lattice Absorption in Wurtzite GaN
- Chemical Bonding Properties of Cubic III-Nitride Semiconductors
- Ground State Triplet Cation Diradicals Generated from N, N-Dimethylamino Nitronyl Nitroxide and Its Homologues through One-Electron Oxidation
- Protective Effects of Hydroxybenzoic Acids and Their Esters on Cell Damage Induced by Hydroxyl Radicals and Hydrogen Peroxides
- Ultrasonic Attenuation in n-Type Ge.III.Effects of Magnetic Field
- Ultrasonic Attenuation in n-Type Ge.I. Impurity Concentration Dependence
- Preparation and Characterization of Gold Nano-Particles Chemisorbed by π-Radical Thiols
- Monte Carlo Study of Correlated Diffusion in Solids
- Monte Carlo Study of Diffusion in Non-bravais Lattice:Application to the bcc Lattice
- Molecular Dynamics Study of α-Ag_2S
- Molecular Dynamics Study of Ag_3SI
- Ultrasonic Attenuation in n-Type Ge.II. Effects of Uniaxial Stress