Current Oscillations Induced by Recombination Instability in Semiconductors
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概要
- 論文の詳細を見る
We present a one-dimensional system of gold-doped n-Ge in which the recombination instabilityleads the system to instability and ctrrrent oscillations. Using the finite difference method, spatio-ternporal evolution of the high-field donuaira is computed with the bias voltage, the recorrtbinationcoefficient. and the emission coefficient being taken as the control parameters. Three types ofmodes of operation: the Ohrnic, the quenched and the transit-time modes are found. Nonperiodic oscillations are also found in the transition region between the quenched and the transit-time modes. Their origins are clarified on the basis of spatio-temporal evolution of the high-fielddomain.
- 社団法人日本物理学会の論文
- 1996-05-15
著者
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OSHIO Ken-ichi
Department of Physiology, School of Medicine, Kinki University
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Oshio Ken-ichi
Department Of Materials Science Faculty Of Science Hiroshima University
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YAHATA Hideo
Department of Materials Science, Faculty of Science, Hiroshima University
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Yahata Hideo
Department Of Materials Science Faculty Of Science
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YAHATA Hideo
Department of Materials Science ,Faculty of Science,Hiroshima University
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