Non-Periodic Current Oscillations in the Gunn-Effect Device with the Impact-Ionization Effect
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概要
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A simulation model of the Gunn-effect device is considered. Using the finite difference method, spatio-temporal evolution of the system in the presence of the impactionization effect in the device is computed for n-GaAs with the recombination rate and the bias voltage being taken as the control parameters. We thereby show the motion of the Gunn-effect device exhibits non-periodic behavior due to its own autonomous nonlinearity even if it is not driven by an external periodic field. The domain motion is perturbed by the carrier generation due to the impact ionization, and it becomes non-periodic for specially chosen model parameters. It also exhibits the inter-pulse incoherent current oscillations similar to the ones observed experimentally. Some remarks are given on the mechanism giving rise to the nonperiodicity on the basis of spatio-temporal evolution of the high-field domain.
- 社団法人日本物理学会の論文
- 1995-05-15
著者
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OSHIO Ken-ichi
Department of Physiology, School of Medicine, Kinki University
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Oshio Ken-ichi
Department Of Materials Science Faculty Of Science Hiroshima University
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YAHATA Hideo
Department of Materials Science, Faculty of Science, Hiroshima University
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Yahata Hideo
Department Of Materials Science Faculty Of Science
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YAHATA Hideo
Department of Materials Science ,Faculty of Science,Hiroshima University
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