Chaotic Current Oscillations in the Gunn-Effect Device Under the dc and the rf Bias Voltages
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概要
- 論文の詳細を見る
A one-dimensional model system of the Gunn-effect device is considered. It consists of an n^+ -n-n^+ GaAs sandwich structure where the high-n^+ contact layers on both ends are linearly graded to the uniformly distributed low-n bulk region and a half-wave sinusoidal doping notch is incorporated near the cathode. Using the finite differece method, spatio-temporal evolution of the system subject to the dc and the rf-alternating fields is computed with the amplitudes and the frequency being taken as the control parameters. Current oscillations associated with the cyclic traveling high-electric-field domain are shown to materialize over a range of the control parameters. In particular, the current oscillations become chaotic at specially chosen values of these bias parameters.
- 社団法人日本物理学会の論文
- 1993-10-15
著者
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OSHIO Ken-ichi
Department of Physiology, School of Medicine, Kinki University
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Oshio K
Keio Univ. Yokohama
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Oshio Ken-ichi
Department Of Materials Science Faculty Of Science Hiroshima University
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YAHATA Hideo
Department of Materials Science, Faculty of Science, Hiroshima University
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Yahata Hideo
Department Of Materials Science Faculty Of Science Hiroshima University
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Yahata Hideo
Department Of Materials Science Faculty Of Science
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