Tunneling Spectroscopy in In-SrTiO_<3-x> Contact
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概要
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Tunneling characteristics of In-SrTi03-. contact have been measured. Themain feature is reasonably explained by an improved barrier model which takesaccount of electric field dependence of dielectric constant in the barrier. Zerobias anomaly has been observed for samples with low carrier concentration. Thisanomaly suggests the presence of electron-localization-sites in SrTi0. ,. Insecond-derivative characteristics, many fine structures which correspond tomaxima of phonon-density-of-states in SrTi0. have been observed. As for theintensity of the structure, a contribution of self-energy-effect has been observed.
- 社団法人日本物理学会の論文
- 1981-08-15
著者
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Aoki Ryozo
Department Of Electrical Engineering Osaka University
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Hayashi Seiji
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Ohta Toshihiko
Department Of Physics Faculty Of Science Kyushu University
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Hayashi Seiji
Department Of Physics Faculty Of Science Kyushu University:toshiba Corporation Semiconducting Device
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Ohta Toshihiko
Department of Physics,Faculty of Science,Kyushu University
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OHTA Toshihiko
Department of Ophthalmology, Juntendo University Shizuoka Hospital
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