Inelastic Electron Tunneling Spectroscopy in MIS and MS Tunnel Junctions
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概要
- 論文の詳細を見る
Calculation of the tunneling conductance for inelastic tunneling process withexcitation energy Ico are carried out, and it is clarified that inelastic electrontunneling spectroscopy (JETS) can be a useful tool for investigation of electronicstates in semiconductors. The electronic states of the semiconductor arc relatedto the inelastic tunneling current in the bias range from Ico/e to Ico/e -I- V.. Thisbias increase of Ico/e brings some advantage such as separation of the electronicstructure from zero bias anomaly and from other structure due to excitation inthe barrier.In experiments for MS contacts of In-SrTi0.-, concaves appeared in thed V/dJ curves via inelastic tunneling process, and they were confirmed to be due tothe electronic states 0f the SrTi0, ,.
- 社団法人日本物理学会の論文
- 1981-08-15
著者
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Aoki Ryozo
Department Of Electrical Engineering Osaka University
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Hayashi Seiji
Department Of Anatomy And Neurobiology Kyoto Prefectural University Of Medicine
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Hayashi Seiji
Department Of Physics Kyushu University:toshiba Corporation Semiconductor Division
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