Differential Capacitance of the Schottky Barrier on a Semiconducting Ferroelectric and Related Materials
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概要
- 論文の詳細を見る
An expression for the differential capacitance of the Schottky barrier at a metal-semiconductor contact is derived for the case in which the dielectric constant ε depends on the electric field E and the space charge density depends on the electrostatic potential. The dependence of the space charge density on the potential is found to influence the differential capacitance in the same way as in a semiconductor with a dielectric constant independent of the electric field. When the dielectric constants of semiconductors of different doping densities depend on the electric field in the same way, the relation between the capacitance C and the bias voltage V_a is expected to obey a universal function. The 1/C^2 vs. V_a characteristic is concave upward when dε/dmidEmid<0,downward when dε/dmidEmid>0.
- 社団法人応用物理学会の論文
- 1981-05-05
著者
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MIYAZAKI Tomoyuki
Department of Electrical and Electronics Engineering, Kagoshima University
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Ohta Toshihiko
Department Of Physics Faculty Of Science Kyushu University
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HIDESHIMA Osamu
Department of Physics, Faculty of Science, Kyushu University
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Miyazaki Tomoyuki
Department Of Anesthesiology And Critical Care Medicine Yokohama City University Graduate School Of
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Hideshima Osamu
Department Of Physics Faculty Of Science Kyushu University
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MIYAZAKI Tomoyuki
Department of Physics, Faculty of Science, Kyushu University
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OHTA Toshihiko
Department of Ophthalmology, Juntendo University Shizuoka Hospital
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