Anomalous Differential Capacitance of the Schottky Barrier on a Semiconductor with Electric-Field-Dependent Dielectric Constant
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概要
- 論文の詳細を見る
The differential capacitance C of a Schottky barrier with bias voltage V_a is derived for the case that near the surface of the semiconductor there are two regions with different electric-field-dependences of the dielectric constant. The d (1/C^2)/dV_a vs V_a characteristics is found to show discontinuity when the edge of the depletion layer passes the boundary between the two regions.
- 社団法人応用物理学会の論文
- 1981-05-05
著者
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Miyazaki Tomoyuki
Department Of Anesthesiology And Critical Care Medicine Yokohama City University Graduate School Of
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Hideshima Osamu
Department Of Physics Faculty Of Science Kyushu University
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