Effects of Oxygen Vacancies on the Electronic States in Copper Oxides
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概要
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We study effects of an oxygen vacancy on the electronic state of the CuO_2 plane in the normal state, on the basis of the d-p model. We calculate the local density of states at copper sites and oxygen sites around the pr^x-oxygen vacancy, at T = T_c. The spatial distribution has a shape which oscillates along the diagonal directions, reflecting the form of the Fermi surface. We find that another gentle oscillation along the X axis appears in the local density of states of d- and p^x-electron, while disappears in that of p^y-electron due to the crystal structure.
- 社団法人日本物理学会の論文
- 2002-09-15
著者
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NAKANISHI Hiroshi
Department of Precision Science and Technology and Applied Physics, Osaka University
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KASAI Hideaki
Department of Precision Science and Technology and Applied Physics, Osaka University
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Okiji A
Wakayama National Coll. Of Technol. Wakayama Jpn
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Okiji Ayao
Wakayama National College Of Technology
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MATSUNAKA Daisuke
Department of Applied Physics, Osaka University
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Matsunaka Daisuke
Department Of Applied Physics Osaka University
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Kasai Hideaki
Department Of Applied Physics Faculty Of Engineering Osaka University
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Kasai Haruo
Department Of Electronics Chiba University
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Nakanishi Hiroshi
Department Of Biological Science And Technology Tokyo University Of Science
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Okiji Ayao
Department of Applied Physics, Osaka University
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Nakanishi Hiroshi
Department of Applied Physics, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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