Tunneling Spectroscopy of the Band Edge Structure of SnTe
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概要
- 論文の詳細を見る
The band edge structure of SnTe has been studied by the tunneling spectroscopy.Tunneling measurements are performed between room temperature and 140 K on theepitaxial SnTe films grown by the hot wall epitaxy method. The saddle point structurenear the band edge is detected in the third derivative curve of the tunneling current vsbias voltage (d'l/ d V' - V). The energy difference between the band edge and the sad-die point in the conduction band is about 80 men, and is in good agreement with thetheory.
- 社団法人日本物理学会の論文
- 1989-06-15
著者
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Enomoto Hiroyuki
Department of Neurology, National Douhoku Hospital
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Enomoto H
Osaka Electro-communication Univ. Osaka Jpn
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OZAKI Hajime
Department of Electrical, Electronics and Computer Engineering, Waseda University
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Enomoto Hiroyuki
Department Of Civil Engineering Kitami Institute Of Technology
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Enomoto Hiroyuki
Department Of Electrical Engineering Waseda University
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Ozaki Hajime
Department Of Electrical Engineering Waseda University
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Muramoto Y
Ntt Network Innovation Laboratories Ntt Corporation
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MIYAMOTO Yutaka
Department of Electrical Engineering,Waseda University
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Ozaki Hajime
Department Of Electrical Electronics And Computer Engineering Waseda University
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Enomoto Hiroyuki
Department Of Applied Chemistry Faculty Of Engineering Osaka Electro-communication University
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Miyamoto Yutaka
Department of Chemical Engineering, Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531, Japan
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