Field-Effect Study of the Staebler-Wronski Effect in Hydrogenated Amorphous Silicon
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概要
- 論文の詳細を見る
The Staebler-Wronski effect (SWE) exhibited by a-Si:H was studied by the field-effect (FE) technique. A new method for the determination of the flat band voltage ($V_{\text{FB}}$) using the third differential coefficient of the FE curve was proposed. The computer time in the calculation of $V_{\text{FB}}$ was shortened considerably by this method, coupled with the self-consistent method. A peak was observed clearly in the density of states curve just above the Fermi level, and it was found to change reversibly in the cycle of illumination and annealing. This peak was identified via FE measurements as the D- dangling bond states induced from the D0 dangling bond states.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-02-20
著者
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Ozaki Hajime
Department Of Electrical Electronics And Computer Engineering Waseda University
-
Enomoto Hiroyuki
Department Of Applied Chemistry Faculty Of Engineering Osaka Electro-communication University
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Ozaki Hajime
Department of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 160
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Bautista Ma.
Department of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 160
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Enomoto Hiroyuki
Department of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 160
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- Field-Effect Study of the Staebler-Wronski Effect in Hydrogenated Amorphous Silicon