Magnetoresistance Effect in Single Crystals of Gd
スポンサーリンク
概要
- 論文の詳細を見る
Measurements of orientational and forced magnetoresistances have been done on Gd single crystals in a range from 77K to 400K. According to a phenomenological analysis, the four anisotropy constants of the orientational magnetoresistance were determined. The temperature dependence of the orientational magnetoresistance showed generally two minima and a maximum, While the constants showed single minimum. This appears to be attributable partly to the variation of the easy direction with temperature. The temperature dependence of the forced magnetoresistance also was anisotropic. This seems to be related to the variation of the electrical resistance with temperature.
- 社団法人日本物理学会の論文
- 1971-11-05
著者
-
Hiraoka Takeshi
Department Of Physics Faculty Of Science And Engineering Saga University
-
SUZUKI Morio
Department of Physics,Faculty of Science and Engineering,Saga University
-
Suzuki Morio
Department Of Material Science Department Of Applied Chemistry Faculty Of Engineering Shizuoka Unive
-
Suzuki Morio
Department of Industrial Chemistry, Faculty of Engineering, Shizuoka University
関連論文
- Hall Effect in the Singlet Ground State System:PrIn_3
- Effect of Pressure on the Curie Temperature in GdZn_In_x (0
- Extraordinary Hall Effect in Ce_La_xAl_2
- The Role of Exchange and Quadrupolar Scattering and the Effect of CEF on the Electrical Resistivity in NdIn_3
- Temperature Dependence of Pressure Effect on the Saturation Moment in Fe and Ni
- Anitiferromagnetic Skew Scattering Hall Effect in NdZn
- Magnetization and Extraordinary Hall Effect in Ferrimagnetic Compounds Er_Y_xFe_2
- An Apparatus for Production of Pulsed High Magnetic Field by AC Half Cycle Method
- Effect of Pressure on the Hall Effect, Electrical Resistivity and Magnetoresistance in the High-T_c Superconductor, YBa_2Cu_3O_
- Tunneling Studies of BaPb_Bi_O_3
- Triboluminescence of ZnS:Mn Films Deposited on Quartz Substrates with ZnO Buffer Layers
- Strong Ultraviolet and Green Emissions at Room Temperature from Annealed ZnO Thin Films
- SHG-Active Polymorphism of p-Nitroaniline Mixed with Its N-Alkyl Derivatives
- Anomalies of the Galvanomagnatic Effect in GdZn_In_x (0
- Anisotropy of the Extraordinary Hall Effect of Ni Single Crystals
- Tunneling Studies of Andreev Reflection in Ag-SiO-Bi_2Sr_2CaCu_2O_ Planar Junctions
- Conductance Peak at Zero-Bias in Ag-SiO-Bi_2Sr_2CaCu_2O_ Planar Tunnel Junctions
- Magnetoresistance Effect in Single Crystals of Gd
- Preparation of Insulating Film for Tunneling Study on Zero Bias Anomaly
- Tunneling Spectroscopy of InSb -Temperature Dependence of Zero-Bias Anomaly-
- The Resistance of Metal Electrode on High-T_C Superconductor YBa_2Cu_3O_&la;7-δ>
- Tunneling Studies in BaPb_Bi_O_3 under Magnetic Fields
- Tunneling Study of Localized States in Reserved Region of Sb-Doped Si
- Variable Range Hopping Assisted Tunneling in Pb-Sb Doped Si Schottky Tunnel Junction
- Hole Concentration Dependences of Superconducting Gap and Pseudo Gap in Bi_2Sr_2Ca_Y_xCu_2O_
- Magneto-Tunneling Spectroscopy of InSb
- Photochemical reactions of 4-flavanols in the presence of ketone sensitizers.
- Photoreactions of flavanones.
- Photooxygenation reactions of 4-flavanols and benzylic-type alcohols.
- Photoreactions of the uranyl ion with arylaldehydes in solution.
- Photoreactions of cyclic benzylidene acetals with ketones in the presence and absence of dissolved oxygen.