Magneto-Tunneling Spectroscopy of InSb

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概要

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• The zero-bias anomaly in the tunnel conductance G(V, H) characteristics of Pb-Si0...-InSb junctions was investigated under zero and 37.2 k0e magnetic fields at4.4 K for the junction fabricated on n-InSb (n = 8.14 X 10" cm ') and under magneticfields from 0 to 31.0k0e at 4.2K for the junction fabricated on p-InSb (p2.65 X 10" cm '). The G(V, H) was almost independent of the magnetic field for thejunction fabricated on n-InSb. For the junction fabricated on p-InSb, the magneticfield dependence of differential resistance 7?(0, H) = l / 640, H) was found to obey therelation In 7<(0, H)cf-H. Taking into account the shrinkage of hole orbit in localizedstates with the magnetic field, we can explain the behavior by the variable-range hop-ping assisted tunneling.

• 社団法人日本物理学会の論文
• 1988-04-15

著者

• Suzuki Morio

  Department Of Material Science Department Of Applied Chemistry Faculty Of Engineering Shizuoka Unive

• Kawata Shuzo

  Department Of Physics Faculty Of Education Saga University

• Kawata Shuzo

  Department Of Science Faculty Of Education Saga University

• ICHINOSE Shigenori

  Department of Physics,Faculty of Science and Engineering,Saga University

• Ichinose Shigenori

  Department Of Physics Faculty Of Science And Engineering Saga University

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