Tunneling Studies in BaPb_<0.75>Bi_<0.25>O_3 under Magnetic Fields

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概要

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• The tunnel conductances were measured for the Ag-SiO-BaPb_<0.75>Bi_<0.25>O_3 junctions at 4.2 K under magnetic fields of 0, 0.62, 1.24, 2.17 and 3.41 T. The coupling strength factor, 2Δ/k_BT_c is found to be equal to 3.6 and in a weak coupling regime. From the magnetic field dependence of tunnel conductance atV=0 mV, the second critical magnetic field H_c is estimated as 4.2 T at 4.2 K. It is found that the large value of tunnel conductance at zero bias voltage is brought by a lifetime effect of BaPb_<0.75>Bi_<0.25>O_3 and a leak current and that taking into account the leak current, the present tunnel conductance characteristics can be explained in the framework of BCS theory.

• 社団法人日本物理学会の論文
• 1994-04-15

著者

• NAGANO Masamitsu

  Department of Applied Chemistry, Faculty of Science and Engineering, Saga University

• Nagano Masamitsu

  Department Of Applied Chemistry Faculty Of Science And Engineering Saga University

• Suzuki Morio

  Department Of Material Science Department Of Applied Chemistry Faculty Of Engineering Shizuoka Unive

• Komorita K

  Department Of Electronic Engineering Faculty Of Science And Engineering Saga University

• Komorita Kazunori

  Department Of Electrical Engineering And Physics

• SUZUKI Morio

  Department of Physics, Faculty of Science and Engineering, Saga University

• Suzuki Morio

  Department of Industrial Chemistry, Faculty of Engineering, Shizuoka University

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