Variable Range Hopping Assisted Tunneling in Pb-Sb Doped Si Schottky Tunnel Junction
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概要
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The tunnel conductance dI/dV=G(V) of a Pb-Si Schottky junction made from Sb-doped Si wafer with a carrier concentration of 5.5×10^<18>cm^<-3> at room temperature was measured at temperatures ranging from 4.2 to 50.5 K. G(0) was then converted to the incremental resistance dV/dI=R(0) at zero bias. The resistance R(0) was observed to depend strongly on temperature T and to obey the relation In R(0)∝T^<-1/4>, with a bending at 11.6 K. This behavior of R(0) is interpreted by considering two reserve regions in the Schottky barrier, one being situated just inside the depleted region and the other well inside it, for the final hopping states.
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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Suzuki Morio
Department Of Physics Faculty Of Science And Engineering Saga University
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Suzuki Morio
Department Of Material Science Department Of Applied Chemistry Faculty Of Engineering Shizuoka Unive
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