Tunneling Spectroscopy of InSb -Temperature Dependence of Zero-Bias Anomaly-
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概要
- 論文の詳細を見る
The tunnel conductance characteristics of Pb-Si0...-Te doped InSb junctions(0<,v< l) were measured at temperatures between 2.6 and 32 K, and were found toshow a l'-shape zero-bias anomaly. The temperature dependence of the zero-biasanomaly was stronger in junctions fabricated on non-doped InSb than 0.08%Tedoped InSb. The temperature dependence of an incremental resistance 7?(0) wasfound to largely deviate from that calculated from a collective excitation model andto obey to In 7lS(0) (X T "', where 7?(0) is a value of (cll/ dU) ' at zero bias. The zero-bias anomaly in Pb-Si0...-InSb junctions can be explained with a variable-rangehopping assisted tunneling, but not with a collective excitation model.
- 社団法人日本物理学会の論文
- 1986-12-15
著者
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YAMADA Takayuki
Department of Pathophysiological Laboratory Sciences, Nagoya University Graduate School of Medicine
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Yamada Takayuki
Department Of Cardiology Kokura Memorial Hospital
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SUZUKI Morio
Department of Physics,Faculty of Science and Engineering,Saga University
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Suzuki Morio
Department Of Material Science Department Of Applied Chemistry Faculty Of Engineering Shizuoka Unive
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Kawata S
Osaka Univ. Suita‐shi Jpn
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KAWATA Shuzo
Department of Science,Faculty of Education,Saga University
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Kawata S
Saga Univ. Saga Jpn
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Kawata Shuzo
Department Of Physics Faculty Of Education Saga University
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Yamada Takayuki
Department Of Physics Faculty Of Science And Engineering Saga University
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Suzuki Morio
Department of Industrial Chemistry, Faculty of Engineering, Shizuoka University
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