Thickness Dependence of Carrier-Electron States in Doped Semiconductor Films

概要

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By raaeans of the local-density-ftrnctional fornualistn, xve exazmine the thickness dejcendence ofcarrier-electron states in doped sermicondtrctor films with and withotrt surface carrier-depletionlayers. The film tl'xickness is varied in a broad range xvhere otrr carrier system evolves frorm avirttrally seraui-infinite (S-I) systern to a quasi-two-diuaaensional (2D) one, The carrier-densitydistribtmtion uaear tlae strrface and the level of the chenaical potential are found to retrraira tluesatne as those of tlae S-I systetn down t,o strch 21 szaaall thickness that carrier uuaotion norraaal to thestmrfaces is quantized significantly. NVith further decrease in filtn thickness, otrr carrier systeraaevolves fiom the above S-I-like system into a qvxasi-2D orae differently in the absence and presenceof the depletion layers.
社団法人日本物理学会の論文
1999-12-15