X-Ray Observations of Lattice Defects in Particular, Stacking Faults in the Neighbourhood of a Twin Boundary in Silicon Single Crystals
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概要
- 論文の詳細を見る
Lattice defects in silicon single crystals are observed using Lang's technique of X-ray diffraction microscopy. Lattice defects such as dislocations and two-dimensionally extended defects are observed only on one side of a twin boundary which is normal to the growth axis <111>. Two-dimensional defect is concluded to be due to stacking fault from the study of the disappearance condition of the image with reflections. Fringe patterns due to stacking fualt is compared with the one due to a twinplane. The effect of heat-treatment on stacking faults are studied.
- 社団法人日本物理学会の論文
- 1962-06-05
著者
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Kohra Kazutake
Institute For Super Materials Ulvac Japan Ltd.
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Yoshimatsu Mitsuru
Rigaku Denki Co. Lid.
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Yoshimatsu Mitsuru
Rigaku Denki Company Ltd.
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Kohra K.
Institute of Physics, College of General Education, University of Tokyo
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