Observations on the Polygonization of Bent LiF Crystals by the Berg-Barrent Method

スポンサーリンク

概要

• 論文の詳細を見る

• Weakly bent LiF crystals are successively annealed at various temperatures from 400℃ to 800℃ and the polygonization process is observed. Slip lines disappear at about 450℃ and appear again at about 500℃. At higher temperature than 500℃, edge dislocations move to form polygon walls. The complete polygon walls are produced at 660℃, and coarsening of polygon domains occurs above this temperature. The coarsening proceeds through either of two processes: coalescence of two branches of the Y-shaped polygon walls and absorption of a polygon wall another parallel polygon wall. The L-shaped polygon domains are formed when two glide systems, perpendicular to each other, are acting, which are predominant on either side of the neutral plane, respectively.

• 社団法人日本物理学会の論文
• 1961-11-05

著者

• Yoshimatsu Mitsuru

  Rigaku Denki Co. Lid.

• Yoshimatsu M.

  Rigaku Denki Co. Lid.

関連論文

• X-ray Study of Lattice Defects in Si Single Crystals by Transmission Berg-Barrett Technique
• X-ray Topographic Study on Stacking Faults in Silicon Single Crystals
• Some Observations of Imperfections in ADP Single Crystals by X-Ray Diffraction Micrography
• X-Ray Observations of Lattice Defects in Particular, Stacking Faults in the Neighbourhood of a Twin Boundary in Silicon Single Crystals
• Observations on the Polygonization of Bent LiF Crystals by the Berg-Barrent Method
• Loop Shaped Images Observed in X-Ray Diffraction Micrographs of Silicon Single Crystals
• A New Type of X-Ray Pendellosung Fringes Observed in a Parallel-Sided Quartz Single Crystal
• X-ray observations on Cleavage Faces of LiF Single Crystals

スポンサーリンク