X-ray Topographic Study on Stacking Faults in Silicon Single Crystals

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概要

• 論文の詳細を見る

• Various types of stacking faults are studied in more detail. Boundaries of stacking faults are concluded to be partial dislocations of the Shockley type. Stacking faults introduced by splitting of total dislocations into partial dislocations are also observed. By comparative studies of X-ray image with optical ones of the etched surface, it is found that some stacking faults consist of multi-planes of different dimensions.

• 社団法人応用物理学会の論文
• 1964-02-15

著者

• YOSHIMATSU Mitsuru

  Rigaku Denki Co. Ltd.

• Yoshimatsu Mitsuru

  Rigaku Denki Co. Lid.

• Yoshimatsu M.

  Rigaku Denki Co. Lid.

関連論文

• X-ray Study of Lattice Defects in Si Single Crystals by Transmission Berg-Barrett Technique
• X-ray Topographic Study on Stacking Faults in Silicon Single Crystals
• Some Observations of Imperfections in ADP Single Crystals by X-Ray Diffraction Micrography
• X-Ray Observations of Lattice Defects in Particular, Stacking Faults in the Neighbourhood of a Twin Boundary in Silicon Single Crystals
• Observations on the Polygonization of Bent LiF Crystals by the Berg-Barrent Method
• Loop Shaped Images Observed in X-Ray Diffraction Micrographs of Silicon Single Crystals
• A New Type of X-Ray Pendellosung Fringes Observed in a Parallel-Sided Quartz Single Crystal
• X-ray observations on Cleavage Faces of LiF Single Crystals

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