Si0_2薄膜付きウエハ上微粒子からの散乱光シミュレーション

概要

論文の詳細を見る
More than 80% of the pattern defects in a semiconductor manufacturing process are caused by the adhesion of particles on a wafer. In a factory, the particles larger than 0.1μm in diameter on the wafer on which a SiO_2 thin film was deposited, have to be inspected, In this study, a system for detecting the light intensity scattered by particles 0.1-0.2μm in diameter on the wafer on which a SiO_2 thin film was deposited, without being influenced by the thickness variation of the thin films, is developed by simulation. The following results were obtained from the simulation. (1) P-polarized laser light with the incident angle of 75°is suitable for the illumination. (2) A method of detecting the light scattered perpendicularly upward onto the wafer is suitable for the detection. (3) The optimum numerical aperture of the detection lens is approximately 0.6. The variation of the detected light intensity is 61% when the light scattered by a particle 0.1μm in diameter on a wafer on which a 0-300-nm-thick SiO_2 thin film was deposited, is detected. The correlation factor between the scattered light intensity detected by a photo-detector and the standing wave intensity on the SiO_2 thin film is greater than 0.7. The good correlation between these two intensities is verified.
社団法人精密工学会の論文
2001-10-05