基板加振式プラズマエッチングの研究(第1報) : 基本装置の試作と加振効果の検証

概要

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A novel plasma etching technique has been developed for improvements of etching rate and aspect ratio. So far, etching characteristics are improved mainly by controlling plasma particle anisotoropic movements, gas components and thermal conditions etc. Against this backdrop, a substrate vibration mechanism is proposed to enhance the relative movement of the substrate in plasma particles and promote a better gas stirring. This paper describes the principle of the mechanical vibration assisted plasma etching, basic construction of the reactor and some evaluations of the vibration assisted etching. A prototype reactor has been constructed by using a stacked piezoelectric resonator with a resonant frequency of 2.9KHz and a maximum vibration amplitude of 19.2μm. Si chips with a grid patterning are used for the evaluation of etching characteristics in SF_6 gas. The results indicate usefulness of the new technique in silicon trench etching for SiO_2 and chromium masks.
公益社団法人精密工学会の論文
1999-09-05